Influence of radiation damage on the absorption of near-infrared light in silicon
The absorption length, λabs, of light with wavelengths between 0.95 and 1.30 μm in silicon irradiated with 24 GeV/c protons to 1 MeV neutron equivalent fluences up to 8.6×1015 cm−2 has been measured. It is found that λabs decreases with fluence due to radiation-induced defects. A phenomenological pa...
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| Veröffentlicht in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2020-07, Vol.968, p.163955, Article 163955 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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| Zusammenfassung: | The absorption length, λabs, of light with wavelengths between 0.95 and 1.30 μm in silicon irradiated with 24 GeV/c protons to 1 MeV neutron equivalent fluences up to 8.6×1015 cm−2 has been measured. It is found that λabs decreases with fluence due to radiation-induced defects. A phenomenological parametrization of the radiation-induced change of λabs as a function of wavelength and neutron equivalent fluence at room temperature is given. The observation of the decrease of λabs with irradiation is confirmed by edge-TCT measurements on irradiated silicon strip detectors. Using the measured wavelength dependence of λabs, the change of the silicon band-gap with fluence is determined. |
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| ISSN: | 0168-9002 1872-9576 |
| DOI: | 10.1016/j.nima.2020.163955 |