SnS2 memtransistor-based Lorenz chaotic system for true random number generation

As the Internet of Things (IoT) landscape expands, the need for robust and energy-efficient hardware security has increased. In this study, we demonstrate a novel true random number generation (TRNG) system that combines a tin disulfide (SnS2) nanosheet-based memtransistor with the Lorenz chaotic sy...

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Veröffentlicht in:Nano energy 2024-08, Vol.127, p.109764, Article 109764
Hauptverfasser: Rehman, Shania, Kim, Moon-Seok, Khan, Muhammad Farooq, Kim, Sungho
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Sprache:eng
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Zusammenfassung:As the Internet of Things (IoT) landscape expands, the need for robust and energy-efficient hardware security has increased. In this study, we demonstrate a novel true random number generation (TRNG) system that combines a tin disulfide (SnS2) nanosheet-based memtransistor with the Lorenz chaotic system. This synergy leverages the intrinsic stochasticity of electron trapping at the SnS2 interfaces and the energy efficiency of the Lorenz chaotic system realized by an analog circuit. In addition, we provide a comprehensive evaluation of the energy consumption of the entire TRNG system based on direct measurements of the supply current. Remarkably, our TRNG achieves an energy consumption of 4.3 μJ/bit with a throughput of 10 kbit/s. [Display omitted] •True random number generator combining a memtransistor with the Lorenz chaotic system.•Intrinsic stochasticity of trapping in the SnS2 memtransistor generates random numbers.•Minimal defects at SnS2 interface allows to achieve energy-efficient operation.•The system achieves an energy consumption of 4.3 μJ/bit with a throughput of 10 kbit/s.
ISSN:2211-2855
DOI:10.1016/j.nanoen.2024.109764