Piezo-phototronic effect enhanced performance of a p-ZnO NW based UV–Vis–NIR photodetector

ZnO, as a potential candidate, has attracted extensive attention in optoelectronics, energy systems and other fields. However, the wide bandgap of ZnO severely limits its application in a wide range of photoresponse, and preparing p-type ZnO is another stumbling block that hinders the development of ZnO-based devices. Here, a high-performance photodetector with a wider spectral detection range from UV–vis to NIR builds on the structure of p-ZnO/Al2O3/n-Si is fabricated. The PD exhibits a marked sensitivity (75,000%), excellent responsivity (13.80 A W−1, 365 nm), high specific detectivity (>1012 Jones), fast response (