Transfer of an ultrathin single-crystal silicon film from a silicon-on-insulator to a polymer

This study reports the manufacturing of silicon-on-polymer (SOP). It describes the transfer of a 200 mm diameter silicon thin film from a silicon-on-insulator (SOI) substrate to a flexible polymer. The thickness of the single-crystal silicon film was less than 200 nm, and the transfer was achieved by bonding the SOI wafer to a temporary silicon carrier with an adhesive polymer. Various parameters of the transfer were investigated: adherence of the stack, temperature of bonding, temporary carrier, and Si film thickness. The substrate and the SOI buried oxide were removed by mechanical grinding and chemical etching. The Si thin film was held on a flexible tape, and the temporary carrier was dismounted. SOPs consisting of 20–205-nm thin Si films on a flexible polymer (230 μm) were successfully obtained. Full wafers or patterned wafers of 200-mm diameter could be transferred. [Display omitted] •Transfer of a single-crystal nanofilm of silicon onto a polymer•Manufacturing of single-crystal silicon on polymer structures with a thickness of silicon from 20 to 205 nm•Characterization of both crystalline and strain states of the nanofilm of silicon onto the polymer