Thick β-Ga2O3 homoepitaxial films grown on (2¯01) substrate by mist-CVD

Thick β-Ga2O3 homoepitaxial films have been grown on (2¯01) commercial substrates by mist-CVD with gallium acetylacetonate precursor for the first time. The growth rate of about 2 μm/h has been reached, which is unavailable for any other known epitaxial technique. The layer is characterized by the constant thickness and reasonable structure quality due to low stressed interface. [Display omitted] •The homoepitaxial film has been grown on the (2̅01) β-Ga2O3 substrate for the first time by mist-CVD.•The extremely high growth rate up to 2 μm/h was achieved.•The crystal quality of the grown film amounted at 52 arcsec.•The thickness of the film was uniform over the entire area and amounted to 2 μm.•The chemical homogeneity of the film was confirmed.