In-Situ self-encapsulated flexible multi-layered poly (imide siloxane) copolymer film with resistance to atomic oxygen

[Display omitted] •Imide has a strong resistance to atomic oxygen irradiationIn this paper.•The PI/Ag composite film is conductive and flexible after 260 cycles of bending.•The peel strength of self-yield-Paas is more than that of coated-Paas.•The PI/Ag/PI/Si-PI can resist AO with alternating conductivity/ insulativity.•PI/Ag/PI/Si-PI have potential applications as a flexible PCB in low earth orbit. Silvered polyimide films, synthesized by an in-situ self-assembly method, find many applications in the fields of electronics and aerospace materials. In this work, polyimide/siloxanes were introduced into silvered PI films by an in-situ self-assembly process, which were resistant to atomic oxygen. Their atomic oxygen (AO) resistance behaviors were studied, wherein the mass loss of 20% Si-poly(amide acid salt) PAAS film was 30 ug cm−2 after exposure to AO fluence of 1.33 × 1020 O (10.5 h) and 190 ug cm−2 even after 42 h. Additionally, the volume resistivity value of the flexible PI/Ag composite film was 9.9 Ω cm−1 after 260 cycles of bending. The peel strength of PI/Ag/PI composite film was seven times more than that of the coated one (0.7 N cm-1 to 0.1 N cm-1). Moreover, (Dynamic Mechanical Analysis) DMA and (Thermogravimetric Analysis) TGA data also show that the introduction of self-encapsulating PAAS can not only increase the interlayer strength but maintain the performance of PI film. X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy were also employed to test the relative AO resistance behaviors. Thus, the silvered poly(siloxane amic acid) Si-PI composite films have AO resistance, high peel strength and alternating conductivity/ insulative effect, and hence can serve as a flexible printed circuit board for potential applications in low earth orbit.