Recent progress in group Ⅲ-nitride Micro-LED displays: From material improvement methods, device optimization techniques to full-color realization strategies

As a typical candidate in the field of next-generation optoelectronic display, micro-light-emitting diodes (Micro-LEDs) have drawn a great deal of attention for their unrivalled performance advantages, such as active luminescence, low-power consumption, wide color gamut, long lifetime, fast response speed, and so on. As an advanced display unit, Micro-LEDs conform to the development trend of the information era, and can meet the increasing demand for high-performance micro displays in the development of intelligent devices such as augmented reality (AR), virtual reality (VR) and naked eye 3D projection. However, there are still some obstacles in the process of commercialization of Micro-LEDs. In order to have a remarkable position in future display technology, the Micro-LEDs need to overcome problems related to overall performance of the device itself and high cost of manufacturing. In this review, focusing on the improvement methods for material growth, the optimized techniques for device preparation, and full-color realization strategies for full-color displays, the latest key technological breakthroughs and advanced solutions in these aspects are summarized, and the future development of Micro-LED displays is prospected. •This review covers the whole process of the fabrication of Micro-LEDs displays.•Innovative ideas and key technological breakthroughs of Micro-LEDs are showed.•The future of Micro-LEDs continues towards low cost, high density and efficiency.