Synergistic effects of vacancy and doping at Ge sublattices on the electronic and magnetic properties of new Janus Ge2PAs monolayer

Recently, 2D materials based on IV-V group have attracted great attention because of their interesting physical properties. In this work, Janus Ge2PAs monolayer with good stability is predicted using first-principles calculations. Our simulations assert its non-magnetic semiconductor nature with an indirect band gap of 1.11(1.75)eV obtained by PBE(HSE06)-based calculations. Further, vacancy defects and doping with transition metals (TMs = Cr and Mn) are explored in order to induce novel physical aspects. It is found significant magnetization of Janus Ge2PAs monolayer induced by Ge vacancies with total magnetic moments between 1.58 and 1.97 μB, where magnetism is produced mainly by atomic species around the defect sites. Herein, single Ge vacancy metalizes the monolayer, while the half-metallicity is obtained by creating a pair Ge vacancies. Regardless doping site, feature-rich diluted magnetic semiconductor and half-metallic behaviors are also obtained in Janus Ge2PAs monolayer by doping with Cr and Mn atom, respectively. In these case, TM impurities originate mainly the system magnetism with total magnetic moments between 2.00 and 3.03 μB. In addition, the coexistence of Ge vacancy and doping is also investigated. The calculated spin density shows an antiparallel spin orientation of Cr dopant and its neighboring atoms, meanwhile a parallel spin orientation is observed for Mn impurity and its neighboring atoms. Consequently, small total magnetic moment of 0.53 μB is obtained by the synergistic effects of doping with Cr and Ge vacancy, meanwhile the coexistence of Mn dopant and Ge vacancy generates a larger value of 4.88/4.89 μB. In all cases, the origin of electronic and magnetic properties is unraveled. Our results introduce new prospective spintronic 2D materials made from a new Janus Ge2PAs monolayer.