New skin corrosion effect of magnetorheological electro-Fenton polishing investigated by friction and wear experiments

Currently, most magnetorheological polishing methods use point or linear scanning. When these methods are applied to large-size semiconductor polishing, they are often limited by efficiency, making it difficult to simultaneously consider the surface quality and processing efficiency. In addition, be...

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Veröffentlicht in:Materials science in semiconductor processing 2024-12, Vol.184, p.108759, Article 108759
Hauptverfasser: Ou, Yangting, Wang, Hao, Wu, Yusen, Chen, Zhijun, Yan, Qiusheng, Pan, Jisheng
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Sprache:eng
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Zusammenfassung:Currently, most magnetorheological polishing methods use point or linear scanning. When these methods are applied to large-size semiconductor polishing, they are often limited by efficiency, making it difficult to simultaneously consider the surface quality and processing efficiency. In addition, because the mechanism of magnetorheological polishing is not yet clear, it is difficult to achieve the effect of synergistic enhancement of polishing efficiency and surface quality by simply increasing the magnetic field strength or introducing chemical reactions. In this paper, we propose a new method of combining the flexible force of magnetorheological action with the controllable electro-Fenton chemical action, and experimentally confirm the mechanism of the new skin corrosion effect that occurs under the flexible force applied to the magnetorheological micro-abrasive head, which provides a favorable theoretical research basis for improving the quality and efficiency of magnetorheological polishing. We also simulated the process using a magnetorheological electro-Fenton friction wear device and analyzed the influence of various parameters on the formation of the new skin corrosion effect. The results show that in the case of conventional friction and wear methods failing to form significant material removal corrosion trajectories, the composite friction method of magnetorheological electro-Fenton was able to form a corrosion layer of significant thickness over the entire range of action after the use of magnetorheological electro-Fenton composite friction method. Different third-generation semiconductor materials and crystal directions are presented with very significant corrosion effects. In particular, the best results were obtained when H2O2 was continuously added at a rate of 0.30 g/min, a current parameter of 20 mA, a concentration of 3 wt% diamond particles, and a load of 0.418 N was applied, resulting in a cracked corrosion layer. [Display omitted]
ISSN:1369-8001
DOI:10.1016/j.mssp.2024.108759