Cd0.90Mn0.10Te single crystal for γ – Ray detector application: A comprehensive analysis of structural and compositional homogeneity

This study provides a comprehensive examination of the Cd0.90Mn0.10Te (CMT) single crystal in its role as a radiation detector. Covering aspects from the growth process to detector performance, the primary emphasis is placed on ensuring the uniformity of composition along the growth axis. A cost-effective custom-built vertical Bridgman (VB) setup is developed for the growth of highly homogeneous Cd0.90Mn0.10Te (CMT) single crystal. CMT single crystals of 10 mm diameter and 130 mm length with near uniform stoichiometry along the growth axis were grown using VB method. Laue diffraction confirms the single crystallinity of the grown crystal. The measured lattice constant is comparable to the theoretical value calculated using Vegard’s law. The two mode vibrations of the CdTe and MnTe sublattices were confirmed by Raman spectroscopy. The observed high optical transmittance in the mid-infra-red (IR) region and a nearly constant bandgap of ∼1.6 eV for the wafers taken at different locations along the growth axis reveals the IR transparency and compositional uniformity of the grown crystal. The energy dispersive X-ray spectroscopy proved that the elemental distribution is uniform in the grown crystal. The IR microscopic imaging shows Te inclusions with a number density in the range of ∼2.6–4.5 × 104 cm−2. The resistivity of the CMT crystal for all wafers was found to be in the order of 109 Ωcm. The γ–ray spectral resolution of ∼22 % of 59.5 keV irradiation from 241Am source is achieved. [Display omitted] •Detector grade Cd0.90Mn0.10Te crystal grown by home-built vertical Bridgman method.•Vertical bobbing was used for the first time to synthesise the starting material.•Excellent structural and compositional homogeneity observed across crystal length.•CMT crystal displays good response to 241Am γ-irradiation with energy of 59.5 keV.