Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers

We revisited stacking fault identification based on the characteristic photoluminescence emission wavelengths of 4H–SiC epitaxial wafers, and we investigated 50 000 stacking faults in 70 4H–SiC wafers using wafer-level photoluminescence mapping. The characteristic photoluminescence spectra of each type of stacking fault were obtained and analyzed using high-angle annular dark-field (HAADF) high-resolution scanning transmission electron microscopy (HR-STEM) of the targeted stacking faults. Most stacking faults exhibited specific wavelengths that converged to wavelength bands when plotting all measured wavelengths against each stacking fault. Regardless of the manufacturer of the 4H–SiC epitaxial wafers, 4–6 apparent wavelength bands with a deviation of