High-performance red-emitting InGaN/AlGaN nanowire light-emitting diodes grown through porous template

We report on the achievement of uniform red color InGaN/AlGaN nanowire light-emitting diodes (LEDs) grown on n-type Si(111) by molecular beam epitaxy technique via anodic alumina oxide (AAO) membranes. The AAO template with pore-density ∼0.75 × 1010 cm−2 and hole-diameter ∼110 nm was prepared by anodization method. The devices demonstrate high optical output power of 10.4 mW under current injection of 200 mA at room temperature. Intensive red-light emission at 645 nm with luminous efficacy ∼11.82 lm/W and ∼17.75 lm/W were recorded for 10 × 10 μm2 and 100 × 100 μm2, respectively. The emission intensity of highly ordered InGaN/AlGaN nanowire LED is twice stronger than that of the reference LED. Moreover, negligible blue-shift in peak emission from this red color μLEDs was measured up to a current injection of 500 mA. The red LEDs exhibited stable emission with 87% color purity and retained approximately 80% of their initial luminescence intensity after 360-h continuous current applying. The results demonstrated an effective-cost route to fabricating high-efficiency nanowire LEDs for high-resolution micro-display applications.