Laser induced crystallization of sputtered MoS2 thin films

The integration of transition metal dichalcogenides (TMDs) thin films into Si CMOS-based devices requires the development of new bottom-up material growth approaches producing high crystallinity films without affecting the SiO2/Si substrate. For this purpose, sputtering is a suitable deposition method due to its simplicity, jointly with high reliability and large area deposition capabilities. However, sputtered layers are amorphous and require a post-deposition thermal treatment to obtain a highly crystalline film. Nanosecond pulsed laser annealing (PLA) has recently emerged as promising route to achieve large-scale crystalline TMDs films without significantly heating or affecting the underlying substrate. The aim of this work is to explore the possibility to produce crystalline 2H–MoS2 on large areas directly on a SiO2-on-Si substrate. The film structure, composition and morphology were monitored as a function of the laser pulse energy density by Raman spectroscopy, X-rays diffraction, Rutherford backscattered spectroscopy (RBS), scanning transmission electron microscopy (STEM) and atomic force microscopy (AFM). The electrical properties of the film with optimized crystallinity were finally investigated through deposition of Cr/Au contacts using shadow masks. This approach can be scaled to other TMDs materials and substrates, also paving the way for the fabrication of heterostructures and electrical devices on the top of a single substrate.