Low-resistivity ruthenium metal thin films grown via atomic layer deposition using dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium(II) and oxygen

Low-resistivity ruthenium metal thin films grown via atomic layer deposition using dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium(II) and oxygen

Herein, low-resistivity Ru metal films were fabricated via atomic layer deposition (ALD) using dicarbonyl-bis(5-methyl-2,4-hexanediketonato)Ru(II) and O2 as the Ru precursor and co-reactant, respectively. ALD-grown Ru showed excellent growth characteristics, with high growth per cycle (0.89–1.44 Å/c...

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Veröffentlicht in:Materials science in semiconductor processing 2023-03, Vol.156, p.107258, Article 107258
Hauptverfasser: Ko, Eun Chong, Kim, Jae Yeon, Rhee, Hakseung, Kim, Kyung Min, Han, Jeong Hwan
Format: Artikel
Sprache:eng
Schlagworte:
Atomic layer deposition
Grain size
Low-resistivity
Oxygen impurity
Ru metal film
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Zusammenfassung:Herein, low-resistivity Ru metal films were fabricated via atomic layer deposition (ALD) using dicarbonyl-bis(5-methyl-2,4-hexanediketonato)Ru(II) and O2 as the Ru precursor and co-reactant, respectively. ALD-grown Ru showed excellent growth characteristics, with high growth per cycle (0.89–1.44 Å/cycle), short incubation period (
ISSN:1369-8001
DOI:10.1016/j.mssp.2022.107258