Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H–SiC

Si/4H–SiC heterostructures are synthesized with low pressure chemical vapor deposition at temperatures ranging from 700 to 1080 °C. Microstructural investigations comprise scanning and transmission electron microscopy, as well as X-ray diffractometry analyses. The Si and Si growth orientations are found to be the most dominant, with a strong influence from the deposition temperature. Almost only Si oriented and closed Si films are found at a deposition temperature of 900 °C. At the latter deposition temperature and above, the Si growth is heteroepitaxial. Heterojunction diodes by p+ and n+ doping of the Si top layer are fabricated and characterized. Strong Fermi level pinning is found to be responsible for deposition temperature dependent Schottky barrier heights.