Complex features of the photoluminescence from ZnO nanorods grown by vapor-phase transport method

We present photoluminescence (PL) studies of ZnO nanorods synthesized by high-temperature vapor-phase transport method under pulse laser excitation. The PL spectrum contains a strong near band edge (NBE) emission located at around 387 nm and no emission bands in the visible range were observed. Our...

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Veröffentlicht in:Materials science in semiconductor processing 2021-06, Vol.128, p.105783, Article 105783
Hauptverfasser: Jalolov, R.R., Urolov, Sh.Z., Shaymardanov, Z.Sh, Kurbanov, S.S., Rustamova, B.N.
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Sprache:eng
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Zusammenfassung:We present photoluminescence (PL) studies of ZnO nanorods synthesized by high-temperature vapor-phase transport method under pulse laser excitation. The PL spectrum contains a strong near band edge (NBE) emission located at around 387 nm and no emission bands in the visible range were observed. Our studies show that an increase in power density of pulse UV laser results in appearance of a so-called P-band centered at 389 nm and it overlaps the NBE emission. The variations in excitation intensity and detection angles revealed that the band at 389 nm can be deconvoluted into Lorentzian components at ~382 and ~395 nm. Excitation intensity dependence of the band at 389 nm exhibits a clear threshold behavior while the intensity of the band at ~395 nm grows almost linearly with the increase in the excitation intensity. It is possible that the emission band at 395 nm is associated with emission centers caused by zinc vacancy defects or their complexes in ZnO nanorods.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2021.105783