Structural and optoelectronic studies of BiCuOS semiconductor: A potential photoconverter

[Display omitted] •Investigated synthesis of 2D bismuth copper oxysulfide using the Hydrothermal route.•Established maximum yield through phase assessments for various reaction durations.•Successful fabrication of self-powered photodetector using n-type ZnO/p-BiCuOS.•Achieved spectral detectivity of 8.2 × 107 /3.9 × 1010 Jones at 0 V / 2 V. As a p-type semiconductor, Bismuth copper oxysulfide (BiCuOS) with a narrow bandgap has exceptional absorption characteristics in the visible and near-infrared spectral regions, which have good application prospects for optoelectronic devices. A simple hydrothermal technique is successfully employed for the complicated material synthesis. The desired phase formation of the material has been investigated by varying the reaction time in the procedure, and it is observed to be crucial in maximizing the yield of this material. The scanning electron microscope (SEM) and transmission electron microscope (TEM) are utilized to analyze the morphological and lattice arrangements of the prepared sample. The photodetection performance of the material is assessed through the fabrication of a self-powered p-n heterojunction photodetector with grown n-type ZnO. At self-powered conditions, the device showed a better spectral responsivity of 118 μA/W,detectivity of around 8.27 × 107 Jones, and linear dynamic range (LDR) of 5.7 Hz. The proposed interface of oxychalcogenide semiconductor is anticipated to broaden the research on its improvement and usage in various optoelectronic applications.