2-D Si0.8Ge0.2 source double-gate pocket PTFET for low power application: Modeling and simulation

•A two dimensional p-type tunnel field effect transistor has been modeled.•Si0.8Ge0.2 is used as source in the proposed dual gate PTFET.•Band structure of Si0.8Ge0.2 is studied using DFT.•Also, the surface potential, electric field and drain current have been computed.•The proposed Si0.8Ge0.2 based device can be used in low power applications. To process 1-bit of information the small supply voltage (Vdd) and minimal leakage current are needed for transistors. Subthreshold swing (SS) of 60 mV/dec at 300 K is the basic bottleneck in metal oxide semiconductor field effect transistors. DFT in QuantumATK R-2020.09 was used to study Si0.8Ge0.2 band structure and band gap. A p-type tunnel field effect transistor (PTFET) was modeled employing the dual gate concept. Top gate has two metals; source and counter doped pocket are Si0.8Ge0.2. According to the proposed device simulation, the proposed device is showing excellent thermal stability for large on-current (Ion), weak off-current (Ioff), and weak ambipolar current (Iambi) at different temperatures. The proposed device achieves the Ion of 72.44 µA/µm and 3.2 µA/µm at supply voltage of −1 V and −0.5 V, respectively. At −0.5 V of Vdd, current ratio of Ion/Ioff is more than 1012, so device can be used for low power applications.