Physical properties of different polymorphs of sulfur doped ZnO studied in the framework of first-principles approaches

•Various physical properties of pure and sulfur-doped zinc oxide in the germanium phosphide (GeP), cesium chloride (CsCl), and nickel arsenide (NiAs) type structures are studied using the first-principles approaches in this research.•The structural characteristics of the ZnOS alloys in GeP, CsCl, and NiAs type polymorphs show a slight deviation from Vegard's law, which is consistent with the available literature.•The static dielectric constants of the GeP, CsCl, and NiAs type’s polymorphs demonstrate that with increasing S concentration, polarization is enhanced.•The CsCl type phase of the ZnOS alloys exhibits the maximum value of the static dielectric constant along with showing metallic character.•The optical results highlight the potential of S-doped ZnO in these structures as the highest absorption, reflectivity, and conductivity peaks shift towards low photon energies. Various physical properties of pure and sulfur-doped zinc oxide in the germanium phosphide (GeP), cesium chloride (CsCl), and nickel arsenide (NiAs) type structures are studied using the first-principles approaches in this research. The structural characteristics of the ZnOS alloys in GeP, CsCl, and NiAs type polymorphs show a slight deviation from Vegard's law, which is consistent with the available literature. It is observed that the electronic band structures of the ZnOS alloys show an exciting impact of sulfur (S) substitution in the ZnO. The ZnOS alloys, in CsCl type structure, display their metallic character. The static dielectric constants of the GeP, CsCl, and NiAs type’s polymorphs demonstrate that with increasing S concentration, polarization is enhanced. Moreover, the CsCl type phase of the ZnOS alloys exhibits the maximum value of the static dielectric constant along with showing metallic character. The optical results highlight the potential of S-doped ZnO in these structures as the highest absorption, reflectivity, and conductivity peaks shift towards low photon energies. The examination of the absorption spectra demonstrates that GeP-type ZnOS alloys are suitable for infrared to visible regime applications. On the other hand, NiAs-type ZnOS alloys are appropriate for use in the visible light regime.