Transport and recombination properties of doped SiC nanoribbons with different atoms substituted by group-V elements

[Display omitted] •There is a donor level and a deep impurity level in the band gap of ZSiCNRs except Sb replacing Si.•The transport and recombination properties of group-V doped ZSiCNRs are simulated numerically.•The conductivity is significantly larger for Si atom substituted than that of C atom replacement.•The non-equilibrium minority carrier lifetime is longer with small injection in group-V doped ZSiCNRs. Based on semiconductor theory and optimization data derived from first-principles, we simulate the conductive and recombination properties of group-V doped zigzag SiCNRs (ZSiCNRs), through in-depth analysis of different substitutional doping models, to unveiling the mechanism of carrier transport in nanodevices. It’s found that though there are two impurity energy levels whether C or Si is substituted in doped ZSiCNRs, the conductivity is significantly larger for Si atom substituted than that of C atom replacement. Besides, different temperature dependent conductivity characters are exhibited in the weak and strong ionization regions, indicating the differences in dominant factor for the transport processes. The temperature-dependent holes trapping rate of carrier recombination increased sharply for C or Si atom substitution, indicating a negative temperature-dependence of lifetime of non-equilibrium minority carrier for doped ZSiCNRs. Further, the non-equilibrium minority carrier lifetime is longer with small injection due to the presence of donor impurities in group-V doped ZSiCNRs.