A potential cyan phosphor for full spectrum light-emitting diodes: Bi3+ activated SrBaGdGaO5 phosphor
•Design of bismuth activated SrBaGdGaO5phosphors.•Broadband cyan emission of the SrBaGdGaO5:Bi3+ phosphors.•Potential applications of the SrBaGdGaO5:Bi3+ phosphors in WLED devices. Bi3+ activated phosphors show potential applications in white light emitting diodes. Here, Bi3+ activated SrBaGdGaO5 ph...
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Veröffentlicht in: | Journal of molecular structure 2024-01, Vol.1295, p.136814, Article 136814 |
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Sprache: | eng |
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Zusammenfassung: | •Design of bismuth activated SrBaGdGaO5phosphors.•Broadband cyan emission of the SrBaGdGaO5:Bi3+ phosphors.•Potential applications of the SrBaGdGaO5:Bi3+ phosphors in WLED devices.
Bi3+ activated phosphors show potential applications in white light emitting diodes. Here, Bi3+ activated SrBaGdGaO5 phosphors with different Bi3+ concentrations were prepared. The phase and oxidation states, absorbance/excitation/emission spectra, decay characteristics, and thermostability were researched. Depending on excitation of NUV light, the Bi3+ activated SrBaGdGaO5 phosphors emit cyan light originating from the radiative 3P1 → 1S0 transitions of Bi3+. On the basis of temperature-dependence emission spectra, the activation energy was calculated as 0.305 eV. The warm white light with a correlated color temperature of 4106 K and a color rendering index of 89.2 was emitted by the WLED device consisting of near ultraviolet LED chips, SrBaGdGaO5:Bi3+ and CaAlSiN3:Eu2+ phosphors. The luminescence performance of the cyan SrBaGdGaO5:Bi3+ phosphors indicates that they can remedy the cyan absence for full spectrum white lighting emitting diodes.
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ISSN: | 0022-2860 1872-8014 |
DOI: | 10.1016/j.molstruc.2023.136814 |