Synthesis of RE3+ (RE3+ = Ce3+, Dy3+, Eu3+ and Tb3+) activated Gd2SiO5 optoelectronics materials for lighting

RE3+(RE3+ = Ce3+, Dy3+, Eu3+ and Tb3+) doped Gd2SiO5 optoelectronic materials were synthesised by solid state diffusion method and their down conversion spectral properties were reported in this paper as function of different RE3+ concentrations. The solid state diffusion results in well crystallized phosphor particles. The prepared materials were characterized by XRD, FT-IR, photoluminescence (PL) and CIE color co-ordinates techniques. Spectroscopic investigation revealed that gadolinium oxyorthosilicate (GSO), Gd2SiO5 phosphor doped with Ce3+ shows broad band emission with peak at 390 nm and 440 nm when excited at 350 nm excitation. Gd2SiO5:Dy3+ shows efficient blue and yellow band emissions at 481 nm and 576 nm Gd2SiO5:Eu3+ phosphor shows an orange and red emission at 587 nm and 615 nm respectively. Whereas Gd2SiO5:Tb3+ phosphor shows weak blue emission at 487 nm and strong green 545 nm. The excitation spectra used for the Gd2SiO5:RE3+ (where RE3+ = Ce3+, Dy3+, Eu3+ and Tb3+) phosphor are in the near UV (nUV) region extending from 250 to 400 nm, which is characteristics of modern lighting and display fields applications. The effect of the RE3+ (RE3+ = Ce3+, Dy3+, Eu3+ and Tb3+) concentration on the luminescence properties of Gd2SiO5:RE3+ optoelectronics materials were also studied. The investigated prepared Gd2SiO5 phosphors may be suitable for lighting based devices. •Gd2SiO5: RE3+(RE3+ = Ce3+, Dy3+, Eu3+ and Tb3+) optoelectronic materials were synthesised by solid state diffusion method.•The excitation spectra used for the Gd2SiO5:RE3+ (where RE3+ = Ce3+, Dy3+, Eu3+ and Tb3+) phosphor are in the near UV (nUV) region extending from 250 to 400 nm.•PL emission spectra in visible region of the spectra.•The investigated prepared Gd2SiO5 phosphors may be suitable for lighting.