Investigation on the carrier-storage super-junction IGBT: Characteristics, mechanism, and advantages

Operation mechanisms of the N-type Carrier-storage (N-CS) layer and Super-junction (SJ) pillar in Carrier-storage Super-junction Insulated Gate Bipolar Transistor (CS-SJBT) are clearly investigated in paper. It is pointed out that, under the effect of N-CS layer, Von of CS-SJBT is no more constrained by pillar doping as in CP-SJBTs, and the Von−Eoff contradiction along with pillar doping concentration in CP-SJBTs also no more exist in CS-SJBTs. Structural evolutions from CS-NDBT to CS-SJBT shows that, current conduction ability of SJ pillar and N-drift in CS-IGBTs are equivalent, and the role of SJ pillar locates in substantially reduced switching loss due to the two-dimensional electric field morphology in SJ pillar, which are supported by experimental contrasts. After these investigations, the conventional advantage of SJ in reducing on-state loss as in unipolar SJ-MOSFETs is diverted/extended to switching loss reduction ability in bipolar CS-SJBTs.