Efficient Hybrid CMOS/Memristor Implementation of Bidirectional Associative Memory Using Passive Weight Array

The primacy of memristors for the realization of the synaptic circuit makes this element a promising component for implementing Artificial Neural Networks (ANN). However, integrating memristors with other ANN components is still an open area of research. Therefore, a circuit-level hybrid CMOS/Memris...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Microelectronics 2020-04, Vol.98, p.104725, Article 104725
Hauptverfasser: Molahasani Majdabadi, Mahdiyar, B. Shokouhi, Shahriar, Ko, Seok-Bum
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The primacy of memristors for the realization of the synaptic circuit makes this element a promising component for implementing Artificial Neural Networks (ANN). However, integrating memristors with other ANN components is still an open area of research. Therefore, a circuit-level hybrid CMOS/Memristor architecture for implementing Bidirectional Associative Memory (BAM) is proposed in this paper. A passive bi-directional pre-differentiation crossbar architecture has been utilized and applied for the realization of synaptic weights. A compact, low voltage CMOS neuron that consumes a low amount of power is also designed. The noise tolerance of the proposed hardware is evaluated for typical networks with different sizes and a number of stored patterns. It is demonstrated that the hardware pattern retrieval rate is similar to its software-based counterpart. The influence of memristor non-idealities on BAM is also investigated for the first time, and a practical method has been introduced to deal with this issue. In comparison to the available circuit-level hardware implementation of memristive associative memories, the proposed circuit consumes significantly less power and retrieves the stored patterns notably faster.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2020.104725