Study on plasma-polymerized 1-(trimethylsilyl)pyrrolidine films deposited by plasma-enhanced chemical vapor deposition for use as a Cu diffusion barrier in multilevel metallization process

As integration continues in the modern semiconductor industry, copper (Cu) is used for metal lines and low dielectric constant (low-k) films are used for intermetal dielectrics (IMD) to reduce signal delays occurring in device interconnects. A diffusion barrier is essential between the Cu metal lines and the IMD to prevent Cu diffusion, and silicon carbon-nitride (SiCN) films with relatively low dielectric constants are being widely studied. In this study, SiCN films deposited from 1-(trimethylsilyl)pyrrolidine (TSPD) precursor by plasma-enhanced chemical vapor deposition (PECVD) were investigated for use as a Cu diffusion barrier in multilevel metallization process. This plasma-polymerized TSPD (ppTSPD) monolayer film as SiCN was deposited in plasma powers ranging from 15 to 30 W. The electrical properties of ppTSPD were measured and the chemical properties were analyzed by Fourier-transform infrared spectroscopy (FTIR). The dielectric constant increased with increased plasma power. The lowest dielectric constant of 3.70 and leakage current density at 1 MV/cm of 2.27×10−8 A/cm2 were found for ppTSPD film deposited at 15 W. To verify the Cu diffusion barrier characteristics of the ppTSPD films, a ppTSPD/ppOMCTS bilayer was introduced by using plasma-polymerized octamethylcyclotetrasiloxane (ppOMCTS) as porous low-k SiCOH films. The time-dependent dielectric breakdown (TDDB) characteristic was enhanced around five times than ppOMCTS monolayer used as a reference. The ppTSPD was suggested for fabricating SiCN films for use as a Cu diffusion barrier in multilevel metallization process. [Display omitted] •SiCN films were deposited in plasma-enhanced chemical vapor deposition system.•1-(trimethylsilyl)pyrrolidine was used as a single precursor to fabricate SiCN films.•Dielectric constant of the SiCN film was lowered to 3.70.•Barrier properties were verified by time-dependent dielectric breakdown.