B-site doping with bismuth ion enhances the efficiency and stability of inorganic CsSnI3 perovskite solar cell
•B-site doping with Bi3+ is adopted to enhance the quality of CsSnI3 perovskite.•Bi3+ doping enhances the stability and reduces the defect density of CsSnI3 perovskite.•The assembled cell delivers high power conversion efficiency (PCE) of 6.11 %. B-site doping with bismuth ion (Bi3+) is adopted to e...
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Veröffentlicht in: | Materials letters 2024-01, Vol.354, p.135394, Article 135394 |
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Sprache: | eng |
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Zusammenfassung: | •B-site doping with Bi3+ is adopted to enhance the quality of CsSnI3 perovskite.•Bi3+ doping enhances the stability and reduces the defect density of CsSnI3 perovskite.•The assembled cell delivers high power conversion efficiency (PCE) of 6.11 %.
B-site doping with bismuth ion (Bi3+) is adopted to enhance the quality and stability of CsSnI3 perovskite. The partial displacement of Sn2+ with Bi3+ can not only improve the morphology, crystallinity, and stability of CsSnI3 perovskite film, but also reduce the trap density of CsSnI3 perovskite. Consequently, the fabricated perovskite solar cell with Bi3+-doped CsSnI3 perovskite deliver a high power conversion efficiency of 6.11 %, which is increased by 77 % compared to the efficiency of the control cell. In addition, the device without any encapsulation preserves over 72 % of its initial efficiency after storage in ambient condition for 240 h. |
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ISSN: | 0167-577X 1873-4979 |
DOI: | 10.1016/j.matlet.2023.135394 |