Dislocation structures after creep in an Al-3.85 %Mg alloy studied using EBSD-KAM technique

•EBSD-KAM is used to investigate creep-induced strain accumulation in Al-3.85%Mg.•Prior to the KAM calculation, a denoise filter was used.•An increase in the thickness of the strain bands with increasing load is observed.•Results are indicative of enhanced short-circuit diffusion by dislocation pipes. The electron backscatter diffraction (EBSD) technique is used to investigate the dislocation structures formed after steady-state creep deformation of an Al-3.85%Mg alloy. This material is crept at two different stress levels, corresponding to the so-called power-law and power-law breakdown regimes. The results show that, regardless of the creep stress level, the strain tends to localize, leading to the formation of intragranular bands. The thickness of such bands is larger when the material is tested at loads corresponding to the power-law breakdown. This suggests enhanced diffusion by dislocation pipes.