An exhaustive exploration of Zn0.15Sn0.85(Se0.95S0.05)2 crystal-based photodetector and its potential application as a photocatalytic material

•Unveiling the dual functionality of synthesized Zn15Sn0.85(Se0.95S0.05)2 (ZSSS) crystals makes them shine as optoelectronic devices and photocatalysts.•The hexagonal ZSSS crystals are showing better structural stability under the effect of temperature and exhibit layer growth mechanisms.•P-type ZSS...

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Veröffentlicht in:Materials research bulletin 2024-10, Vol.178, p.112887, Article 112887
Hauptverfasser: Doshi, Yash N., Pathak, Aditi P., Shah, Mona S., Shah, Dimple V., Patel, Kinjal K., Jain, Vishva M., Desai, Hiren N., Patel, Piyush B.
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Sprache:eng
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Zusammenfassung:•Unveiling the dual functionality of synthesized Zn15Sn0.85(Se0.95S0.05)2 (ZSSS) crystals makes them shine as optoelectronic devices and photocatalysts.•The hexagonal ZSSS crystals are showing better structural stability under the effect of temperature and exhibit layer growth mechanisms.•P-type ZSSS crystals exhibit a semiconducting nature and have a direct bandgap of 1.69 eV.•The lower degradation over high temperatures indicates that the grown ZSSS crystals have better thermal stability.•These ZSSS crystals act as better photodetectors with rapid response times and demonstrate strong photocatalytic activity against methylene blue. The research pioneers the exploration of synthesized quaternary Zn0.15Sn0.85(Se0.95S0.05)2 (ZSSS) crystals, demonstrating remarkable efficacy as optoelectronic switching devices and potent photocatalysts. The ZSSS photodetector recorded a stable photoresponse with remarkable rapid rise and decay times. The Langmuir-Hinshelwood kinetic model was used to look at the photocatalytic activity at different methylene blue concentrations. The researchers grew highly pure ZSSS crystals using the direct vapour transport (DVT) method. Field effect scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy (HRTEM) images reveal the layer growth mechanism in the grown crystals. The structural analyses of the grown crystals were carried out using an X-ray diffraction (XRD) pattern and temperature-dependent Raman spectroscopy. The Lorentzian function was fitted to experimental data to carry out the temperature-dependent Raman analysis. The grown crystals exhibit a direct optical bandgap of 1.69 eV. The electrical analyses explain the semiconducting nature of the crystals. [Display omitted]
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2024.112887