BaSnO3-SnO2 heterojunction mesoporous photoanode for quantum dot-sensitized solar cells

•BaSnO3 and SnO2 were used to construct binary heterojunction-type mesoporous photoanode.•BaSnO3-SnO2 heterojunction could improve the charge collection efficient of QDSSCs.•The BaSnO3-SnO2 mesoporous photoanode-based QDSSCs acquired ca. 11% increase in PCE. Mesoporous photoanodes, as quantum dot ad...

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Veröffentlicht in:Materials research bulletin 2023-11, Vol.167, p.112431, Article 112431
Hauptverfasser: Chen, Shixin, Wang, Yinglin, Li, Yanan, Lin, Jianfei, Zhang, Xintong
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Sprache:eng
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Zusammenfassung:•BaSnO3 and SnO2 were used to construct binary heterojunction-type mesoporous photoanode.•BaSnO3-SnO2 heterojunction could improve the charge collection efficient of QDSSCs.•The BaSnO3-SnO2 mesoporous photoanode-based QDSSCs acquired ca. 11% increase in PCE. Mesoporous photoanodes, as quantum dot adsorption framework and electron transfer paths, are the key components in efficient quantum dot-sensitized solar cells (QDSSCs). Binary heterojunction mesoporous photoanodes hold promise for facilitating electron transport due to the heterojunction potential, when compared to conventional mono-component mesoporous photoanodes. In this work, we construct a binary mesoporous photoanode with enhanced mesoporous and electron transport using a BaSnO3-SnO2 heterojunction, and then fabricated CdSe/CdS co-sensitized QDSSCs. The charge extraction, open-circuit voltage decay, electrochemical impedance spectroscopy, and intensity-modulated voltage/photocurrent spectroscopy measurements demonstrated that, in contrast to the BaSnO3 mesoporous photoanode, the BaSnO3-SnO2 mesoporous photoanode could effectively reduce charge recombination and extend the electron lifetime, thus promoting charge collection in the QDSSCs. Based on these merits, the BaSnO3-SnO2 mesoporous photoanode-based solar cells yielded a power conversion efficiency of 3.14%, resulting in a ca. 11% increase in power conversion efficiency, compared to the reference BaSnO3 solar cells. [Display omitted]
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2023.112431