Self-assembly, stability, and photoresponse of PbS quantum dot films capped with mixed halide perovskite ligands

•Oleic acid-capped PbS nanocrystals were drop casted on graphene/Si/SiO2 substrates.•OA-ligands were substituted by I−/Br− inorganic-organic perovskite ligands.•TEM shows nanocrystal fusion with the FAPbI3 perovskite.•Substitution of I− by Br− ions results in more homogeneous and less defectuous layers.•Photoresponse and solar stability of p-channel graphene-based transistors are improved with Br-rich ligands. The type of passivating ligands and the ligand exchange method influence the quality of lead sulfide quantum dot films. This imparts on the efficiency of optoelectronic devices. To get a compact arrangement of the nanocrystals in a thin film (⁓100 nm) via self-assembling, we used organic-inorganic perovskites with mixed halides for the solid-state exchange of oleic acid ligands on PbS QDs (⁓ 4 nm). Formamidinium lead halides FAPbIxBr3-x (x= 3,2,1,0) were used. X-ray spectroscopy shows that successful replacement of oleic acid with FA happens by short immersion of the films (2 min) in the solution. Transmission electron microscopy shows that nano-scale cracks, short-range ordering, and fusion of the nanocrystals happen during the exchange with FAPbI3. Gradual substitution of I− with Br− ions improves the film homogeneity with fewer defects (nano-scale holes and cracks). Uniform cubic assembly of the nanocrystals without defects and high coverage density is obtained with FAPbBr3. The findings are applied to the fabrication of field effect phototransistors on Si/SiO2/graphene wafers. Photoresponse of the devices indicates that the stability of the films in humidified air (26 °C and 51% humidity) is improved from less than 14 days for iodine to more than 60 days for bromine. The ILIGHT/IDARK ratio, responsivity, and specific detectivity increase by 64%, 55%, and 60%, respectively, with FAPbBr3. Prevention of lead sulfide nanocrystal aggregation and the formation of large-scale self-assemblies with perovskite ligands is of technical importance for next-generation optoelectronic applications. [Display omitted]