Dielectric and non-ohmic analysis of Sr2+ influences on CaCu3Ti4O12-based ceramic composites

[Display omitted] •CaCu3Ti4O12 and Sr0.75Ca0.25TiO3 and the ceramic composites (CaCu3Ti4O12/ Sr0.75Ca0.25TiO3) were obtained via solid-state reaction method.•Their (micro)structure was evaluated as a function of the amount of SCTO and CCTO phase content in the samples.•The CCTO/SCTO composites, reve...

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Veröffentlicht in:Materials research bulletin 2021-02, Vol.134, p.111071, Article 111071
Hauptverfasser: Cortés, J.A., Moreno, H., Orrego, S., Bezzon, V.D.N., Ramírez, M.A.
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Sprache:eng
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Zusammenfassung:[Display omitted] •CaCu3Ti4O12 and Sr0.75Ca0.25TiO3 and the ceramic composites (CaCu3Ti4O12/ Sr0.75Ca0.25TiO3) were obtained via solid-state reaction method.•Their (micro)structure was evaluated as a function of the amount of SCTO and CCTO phase content in the samples.•The CCTO/SCTO composites, revealed grain boundary capacitance and grain boundary resistance changes, allowing modulate the application.•Dielectric behavior was observed for samples with CCTO as the major phase (x ≤ 0.30).•Non-ohmic behavior was evident for samples with SCTO as the major phase (x ≥ 1.50). In this study, CaCu3Ti4O12 ceramic composites were prepared through solid-state reaction by adding Sr2+ and removing Cu2+. Application of the Rietveld method and structure refinement revealed the presence of pure CaCu3Ti4O12 (CCTO) phase for x = 0.00 and Sr0.75Ca0.25TiO3 (SCTO) phase for sample x = 3.00. The other samples presented a mixture of both phases. The sample microstructures showed that increasing the amount of SCTO phase led to the formation of cubic CCTO grains. The x = 0.15 sample presented giant dielectric permittivity results, 3.28 × 105, associated with increased grain size and greater grain boundary capacitance, thus indicating it could be a promising material for class III capacitors. On the other hand, greater presence of the SCTO phase displayed potential non-ohmic behavior, as seen with sample x = 2.70, which has a high nonlinear coefficient (α ∼ 30.0) and low current leakage, (IL ∼ 9.0 μA).
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2020.111071