Dielectrically modified lanthanum (La3+) doped LaxCe2-xO3/ SnO2 nanocomposites for technological applications
Metal oxide nanocomposites are in high demand due to their versatile properties and wide range of applications in modern technology, including energy storage devices, electrode material design, and dye-sensitized solar cells (DSSCs). Nanocomposites of LaxCe2-xO3/SnO2 were prepared via sol-gel method...
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Veröffentlicht in: | Materials chemistry and physics 2024-09, Vol.323, p.129624, Article 129624 |
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Sprache: | eng |
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Zusammenfassung: | Metal oxide nanocomposites are in high demand due to their versatile properties and wide range of applications in modern technology, including energy storage devices, electrode material design, and dye-sensitized solar cells (DSSCs). Nanocomposites of LaxCe2-xO3/SnO2 were prepared via sol-gel method. This research work has reported a detailed study of the dielectric properties of LaxCe2-xO3/SnO2 nanocomposites at high frequencies (1 MHz–3 GHz). After forming a mixed phase, the surface morphology was confirmed by HR-TEM, resulting in a significant change in particle size and distribution. Different polarization stages, the effect of grain boundaries and the relaxation phenomenon were discussed with the impact of La3+ contents. Relaxation behaviour at high frequency was examined due to strong polarization. In addition, a high dielectric constant value at high frequency shows that these nanocomposites are eligible to store more energy. At x = 0.6, the maximum value of the dielectric constant was observed. Results demonstrate that LaxCe2-xO3/SnO2 nanocomposites are competent for microwave, high-frequency devices and energy storage applications.
•Nanocomposites of metal oxides are high demanding for energy storage devices, and DSSCs.•XRD analysis confirmed the polycrystalline nature of nanocomposites and crystallite size up to 11–13 nm.•Surface morphology and particle size distribution were studied using transmission electron microscopy (TEM).•Relative permittivity, electric modulus, and the relaxation phenomenon at high frequencies.•The excellent storage capacity makes them applicable for advanced microwave devices. |
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ISSN: | 0254-0584 1879-3312 |
DOI: | 10.1016/j.matchemphys.2024.129624 |