Structural and morphological analysis of ZrSiO4 formation induced by the simultaneous additions of cerium and manganese in ZrO2–SiO2 binary system

The impact of simultaneous additions of cerium and manganese in ZrO2–SiO2 binary oxides to enhance the ZrSiO4 formation is investigated. The synthesis has been performed through sol-gel technique with the maximum concentration of ionic substitutions investigated being 20 wt % with respect to Zr4+ and Si4+. Analytical characterization techniques involving X-ray diffraction, Raman spectroscopy, Rietveld refinement, X-ray photoelectron spectroscopy, transmission and scanning electron microscopy have been used to investigate the phase behaviour, oxidation state of elements, elemental and morphological analysis of the resultant ZrSiO4. The results ensured the ZrSiO4 formation relatively at a low temperature ∼900 °C and consequently its crystallization behaviour indicated a steady enhancement, which is influenced by the dopant concentration and heat treatment conditions. 5 wt % manganese additions yield single phase ZrSiO4 at 1100 °C while their excess additions led to their segregation at the grain boundaries of ZrSiO4. Cerium additions until 5 wt % induced the lattice expansion of ZrSiO4 and this has also facilitated the complete accommodation of manganese in ZrSiO4. Cerium additions beyond 5 wt % led to the crystallization of CeO2. The densification phenomenon of ZrSiO4 has also been influenced by the incremental cerium and manganese additions. Simultaneous additions of cerium and manganese in ZrO2-SiO2 binary oxide. [Display omitted] •5 wt % Ce3+ and Mn2+ additions in ZrO2–SiO2 system yield single-phase ZrSiO4 at 1100 °C.•Mn2+ induces earlier ZrSiO4 crystallization.•Ce3+ expands the occupancy limit of Mn2+ at the crystal lattice of ZrSiO4.•Crystallization of CeO2 at ZrSiO4 matrix beyond 5 wt % additions.•Varied ZrSiO4 densification as a function of enhanced Ce3+ and Mn2+ inclusions.