Crystallization of gallium oxynitride thin films

Crystallization of gallium oxynitride thin films

Gallium oxynitride (GaON) thin films were RF magnetron sputtered on Si(100) substrates at room temperature under O2 and N2 gas flows with various rates. The films were solid-phase crystallized upon post annealing in a vacuum. The resulting crystalline phases were identified with respect to their ani...

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Veröffentlicht in:Journal of solid state chemistry 2020-02, Vol.282, p.121066, Article 121066
1. Verfasser: Akazawa, Housei
Format: Artikel
Sprache:eng
Schlagworte:
Gallium nitride
Gallium oxide
Gallium oxynitride
Magnetron sputtering
Solid-phase crystallization
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Zusammenfassung:Gallium oxynitride (GaON) thin films were RF magnetron sputtered on Si(100) substrates at room temperature under O2 and N2 gas flows with various rates. The films were solid-phase crystallized upon post annealing in a vacuum. The resulting crystalline phases were identified with respect to their anion composition. The optical band gap of GaO1−xNx films scaled linearly with the N2/(N2+O2) flow-rate ratio, from which the nitrogen content (x) was evaluated. At low nitrogen contents (x 
ISSN:0022-4596
1095-726X
DOI:10.1016/j.jssc.2019.121066