An excellent resistive switching memory behaviour based on assembled MoSe2 nanosphere arrays

Resistive switching devices based on oxides have outstanding properties, making them a promising candidate to replace today's transistor-based computer memories as non-volatile memories, and can even find future application in neuromorphic computing. In this work, MoSe2 nanospheres with ∼2.0 μm diameter were firstly synthesized by hydrothermal method. Further, a resistive switching (RS) device was prepared using as-assembled MoSe2 nanospheres array acted as functional layer. The device shows excellent RS memory behaviors with stable resistance ratio and high durability. Besides that, the mechanism of RS behavior is explained from the perspective of formation-disruption of conducting filaments (CF) formed by moving of metal ions on the surface of nanospheres by an external electric field. These characteristics give us a new inspiration for the preparation of memristors that is the memory performance of RS can be improved by assembling nanostructured arrays. [Display omitted] •MoSe2 nanospheres with ∼2.0 μm diameter were synthesized by hydrothermal method.•A resistive switching device was prepared using as-assembled MoSe2 nanospheres array.•The as-prepared device shows excellent resistive switching memory behaviors.•The mechanism is explained by the conducting filaments formed by moving of metal ions.