Current matching and filtered spectrum analysis of wide-bandgap/narrow-bandgap perovskite/CIGS tandem solar cells: A numerical study of 34.52 % efficiency potential
Perovskite (PVK) materials with wide-bandgap (WBG) play a crucial role in achieving high-performance tandem devices but phase segregation and open-circuit voltage (VOC) loss hinders in surpassing the efficiency of single-junction solar cells. Present work discloses a numerical simulation which has b...
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Veröffentlicht in: | The Journal of physics and chemistry of solids 2025-01, Vol.196, p.112300, Article 112300 |
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Sprache: | eng |
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Zusammenfassung: | Perovskite (PVK) materials with wide-bandgap (WBG) play a crucial role in achieving high-performance tandem devices but phase segregation and open-circuit voltage (VOC) loss hinders in surpassing the efficiency of single-junction solar cells. Present work discloses a numerical simulation which has been carried out using a WBG material CH3NH3PbI3-xClx of bandgap (Eg) 1.65eV as an absorber layer of the top cell (TCELL) and a Cu(In,Ga)Se2-based cell having narrow-bandgap (NBG) of Eg (1.27eV) has been used as bottom cell (BCELL). The TCELL utilizes polyethyleneimine ethoxylated (PEIE) interfacial layer to promote charge-collection and charge-tunneling. The TCELL and BCELL have been optimized by various optimization processes such as simultaneous thickness variation of active-region with defect density (DD), variation of interface defect density (IDD) with solar-cell parameters a commendable power conversion efficiency (PCE) of 27.06 %, and 26.77 % has been achieved for respective solar-devices. Variations of numerous electron transport layer (ETL) and hole transport layer (HTL) have also been performed to acquire highly optimized TCELL. Thus, a perovskite/CIGS tandem solar cell (PVK/CIGS-TSC) device has been obtained using filtered-spectra analysis and current-matching (method which display a promising photovoltaic (PV) parameter with a high VOC of 2.29 V, short-circuit current density (JSC) of 17.41 mA/cm2, fill factor (FF) of 86.45 % and PCE of 34.47 %. These discoveries hold significant promise for the future development of TSCs.
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•CH3NH3PbI3-xClx of bandgap (Eg) 1.65eV as an absorber layer of the top cell (TCELL) and a Cu(In,Ga)Se2-based cell having narrow-bandgap (NBG) of Eg (1.27eV) has been used as bottom cell (BCELL).•The TCELL and BCELL have been optimized with its defect density (DD), variation of interface defect density (IDD) with solar-cell parameters a commendable power conversion efficiency (PCE) of 27.06 %, and 26.77 %.•Variations of various electron transport material (ETM) and hole transport material (HTM) have also been performed to further optimize the TCELL.•A tandem perovskite solar cell (TPSC) device has been accomplished with a high VOC of 2.29 V, short-circuit current density (JSC) of 17.41 mA/cm2, fill factor (FF) of 86.45 % and PCE of 34.47 %.•These discoveries hold significant promise for the future development of TPSC. |
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ISSN: | 0022-3697 |
DOI: | 10.1016/j.jpcs.2024.112300 |