Behavior of lattice dynamics, electronic, optical, and mechanical properties of pentanary GaxIn1-xPySbzAs1-y-z alloy lattice matched to GaSb substrate under temperature

The symmetric and anti-symmetric form factors of GaP, InP, InSb, GaSb, InAs, and GaAs are calculated using the pseudo-potential approach (EPM) associated with the improved virtual crystal approximation (VCA), and the electronic band structure of the zinc blende GaxIn1-xPySbzAs1-y-z alloys with a lattice matched to GaSb is determined. The lattice dynamics, and mechanical, and optical properties of these alloys are calculated. The thermal response to the considered properties of the GaxIn1-xPySbzAs1-y-z alloys is studied. We discover that the direct gap in the GaxIn1-xPySbzAs1-y-z alloys reduces when Gallium is added. A direct-to-indirect transition occurs at a concentration of Antimonide of 1 at (x = 0.7 for T = 0 K, 100 K), (x = 0.8 for T = 200 K, 300 K), and (x = 0.9 for T = 400 K, 500 K), respectively. The GaxIn1-xPySbzAs1-y-z/GaSb can be utilized in optoelectronic devices in high-temperature ranges. •Temperature-dependent lattice dynamics properties of GaxIn1-xPySbzAs1-y-z lattice-matched to GaSb substrate have been determined.•Temperature-dependent mechanical properties of GaxIn1-xPySbzAs1-y-z lattice-matched to GaSb substrate have been studied.•Temperature-dependent electronic and optical properties of GaxIn1-xPySbzAs1-y-z lattice-matched to GaSb substrate have been investigated.•There is a good agreement between our calculated results and the available experimental data in the literature.