Forming-free bipolar resistive switching characteristics in Al/Mn3O4/FTO RRAM device

The bipolar resistive switching (BRS) phenomenon was demonstrated in Mn3O4 using an aluminium/Mn3O4/fluorine-doped tin oxide resistive random access memory (RRAM) device. The fabricated RRAM device showed good retention, non-volatile behaviour, and forming-free BRS. The current–voltage characteristics and the temperature dependence of the resistance measurements were used to explore conduction mechanisms, thermal activation energy, and temperature coefficient of resistance. The resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) was ∼102. The device showed different conduction mechanisms in LRS and HRS modes, such as ohmic conduction and space charge limited conduction. The formation and rupture of conducting filaments of oxygen vacancies took place by changing the polarity of external voltage, which may be responsible for resistive switching characteristics in the device. This device is suitable for application in future high-density non-volatile memory RRAM devices. •Bipolar resistive switching phenomenon demonstrated in Mn3O4 nanoparticles.•Fabricated RRAM device shows good retention, non-volatile, and forming-free features.•HRS (OFF) to LRS (ON) ratio ∼102 with two stable resistance states.•Ohmic and space charge limited conduction act as the mechanism.