Behavior of strain-assisted self-trapped holes in pure-silica optical fibers upon pulsed-X-ray irradiation

•Strain-assisted self-trapped holes (STH) do not impede optical fiber communication•New STH bands near 1 eV control radiation-induced absorption at λ = 1.31 and 1.55 µm•Strain-assisted STHs decay upon pulsed-X-ray irradiation at low doses•Decay of strain-assisted STHs gives rise to a variety of less...

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Veröffentlicht in:Journal of non-crystalline solids 2021-08, Vol.566, p.120880, Article 120880
Hauptverfasser: Tomashuk, A.L., Filippov, A.V., Kashaykin, P.F., Salgansky, M.Yu, Vasiliev, S.A., Zverev, O.V., Guryanov, A.N., Semjonov, S.L.
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Sprache:eng
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Zusammenfassung:•Strain-assisted self-trapped holes (STH) do not impede optical fiber communication•New STH bands near 1 eV control radiation-induced absorption at λ = 1.31 and 1.55 µm•Strain-assisted STHs decay upon pulsed-X-ray irradiation at low doses•Decay of strain-assisted STHs gives rise to a variety of less strained STHs Radiation-induced absorption (RIA) in a pure-silica fiber (PSF) was investigated at four wavelengths λ = 659, 828, 1310, and 1550 nm after seven X-ray pulses on the scale 1 μs–2 s. The behavior of RIA due to strain-assisted self-trapped holes (STHs) and of RIA at 1310 and 1550 nm was analyzed. The 1.63- and 1.88-eV strain-assisted STH bands were found to decay nearly completely after seven pulses with the total dose of just 440 Gy. Contrary to the previous assumptions, the 1.63- and 1.88-eV STH bands proved not to be responsible for RIA at the communication wavelengths (1.31 and 1.55 μm) upon pulsed-X-ray irradiation. The real origin of RIA at the communication wavelengths was identified, namely, the recently discovered STH bands centered near 1 eV. RIA due to STHs of other classes and types was found to emerge at the expense of the decayed strain-assisted STHs.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2021.120880