Magnetic and dielectric properties of Nd-Sn-Cu co-doped yttrium iron garnet ferrite

[Display omitted] •The electromagnetic properties of YIG were modulated by doping Nd on the Y site and Sn4+-Cu2+ on the Fe site.•The resistivity and dielectric constant of YIG increase with the increasing concentration of Nd ion doping.•The maximum value of the real part of the dielectric constant i...

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Veröffentlicht in:Journal of magnetism and magnetic materials 2024-02, Vol.591, p.171777, Article 171777
Hauptverfasser: Zhou, Xiaoyuan, Liu, Kangwei, Wang, Qunxi, Wu, Qiong, Zheng, Hui
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Sprache:eng
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Zusammenfassung:[Display omitted] •The electromagnetic properties of YIG were modulated by doping Nd on the Y site and Sn4+-Cu2+ on the Fe site.•The resistivity and dielectric constant of YIG increase with the increasing concentration of Nd ion doping.•The maximum value of the real part of the dielectric constant is achieved for 29.5@200 kHz. Ion doping to regulate the magnetic and dielectric properties of yttrium iron garnet ferrites is highly desirable for microwave devices. This study successfully fabricated Y3-xNdxFe4.8Cu0.1Sn0.1O12 (x = 0, 0.5, 1.0, 1.5) ceramics, controlling their magnetic and dielectric properties via Nd ion doping. The results indicate that the introduction of Nd ions into the YIG lattice, occupying dodecahedral sites and replacing Y3+ ions, leads to an increase in the lattice parameter. The hysteresis loops demonstrate that as the concentration of Nd ion doping increases, the saturation magnetization initially decreases and then increases. Additionally, the complex impedance and dielectric spectrum analysis reveal that the resistivity and dielectric constant of the material increase with the increasing concentration of Nd ion doping. The real part of the dielectric constant reaches its maximum value, 29.5@200 kHz, at x = 1.5. Consequently, Nd doping concentration effectively controls the crystal structure, microstructure, magnetic, and dielectric properties of garnet ferrite, enhancing its magnetic and dielectric properties and potential application in microwave devices.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2024.171777