Density, surface tension, and viscosity of liquid Si–Cr alloys and influence on temperature and fluid flow during solution growth of SiC

•The density, surface tension, and viscosity of liquid Si–Cr alloys were measured.•The estimated surface tension was in good agreement with the measured data.•The estimated density and viscosity deviated from measured data.•CFD simulation was carried out using the measured properties of liquid Si–Cr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:The Journal of chemical thermodynamics 2021-09, Vol.160, p.106476, Article 106476
Hauptverfasser: Daikoku, Hironori, Kawanishi, Sakiko, Ishikawa, Takehiko, Yoshikawa, Takeshi
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:•The density, surface tension, and viscosity of liquid Si–Cr alloys were measured.•The estimated surface tension was in good agreement with the measured data.•The estimated density and viscosity deviated from measured data.•CFD simulation was carried out using the measured properties of liquid Si–Cr alloy.•Fluid velocity and temperature distribution in solution were compared. Solution growth using a Si–Cr-based solvent is a promising process to produce high quality 4H–SiC single crystal. Computational fluid dynamics simulation is an effective method to estimate and control the temperature and fluid flow in the process, although simulations are presently performed using the physical properties of liquid silicon due to the lack of data for properties of the alloy solvent. In the present work, the density, surface tension, and viscosity of liquid Si–18, 40, and 50 mol% Cr alloys were measured by electrostatic levitation. Computational fluid dynamics simulation was carried out using the measured melt properties and compared with those of liquid silicon. Simulation of the Si–40 mol%Cr solvent predicted a larger fluid velocity and smaller temperature distribution in solution than those of the pure silicon solvent.
ISSN:0021-9614
1096-3626
DOI:10.1016/j.jct.2021.106476