Simultaneous influence of rare earth ion doping concentration on radiative and non-radiative transition rates in YVO4: Tm3

The influence of rare-earth ion doping concentration on the luminescence behavior of these ions is of paramount importance to the field of optics. However, the primary factors affecting luminescent behavior extend beyond doping concentration to include the temperature-dependent transition rates of emission energy levels. Investigation into the impact of doping concentration on these temperature-dependent transition rates may prove to be key in addressing this issue. In this study, the 1G4 energy level of Tm3+ was used as an example to investigate the simultaneous effects of doping concentration on radiative and temperature-dependent non-radiative transition rates. The temperature-dependent transition rates of the 1G4 energy level were examined across a temperature range of 323 – 773 K at various doping concentrations. It was found that doping concentration affects both the radiative and non-radiative components of the temperature-dependent transition rates. An increase in doping concentration was shown to enhance the radiative transition rate (WR), while concurrently reducing the coefficient associated with non-radiative transitions (Wi). Interestingly, at lower temperatures, transition rates were observed to increase with concentration, whereas at higher temperatures, they decreased with increasing concentration. These findings provide new insights into the complex competitive relationship between rare earth ion doping concentration and transition rates. •A reversal phenomenon in transition probabilities related to doping concentration has been identified, exemplified by YVO4: Tm3+.•Comprehensive investigation of the relationship between doping concentration and temperature-dependent transition probabilities.•Detailed analysis of the effects of doping concentration on the balance between radiative and non-radiative transition processes.