High-response n-butanol gas sensor based on quasi-Zn-MOFs with tunable surface oxygen vacancies

The gas-sensing performance is significantly impacted by the semiconductor material's morphology. In this research, we successfully fabricated an ultrahigh-sensitive n-butanol gas sensor using MOF-derived quasi-Zn-MOF sensing materials obtained through an annealing process. The creation of quasi-Zn-MOF leads to tunable surface oxygen vacancies and an increase in exposed metal active sites, greatly enhancing the gas sensor's response and selectivity. The response of Zn-MOF-210 toward 30 ppm n-butanol at 200ºC was 173, which is a significant improvement over similar studies. This work emphasizes the importance of regulating the physicochemical structure of quasi-MOF materials and provides an intriguing perspective for developing high-performance gas sensors for detecting n-butanol. •Quasi-Zn-MOF materials are prepared for n-butanol detection.•The sensor exhibits high response value (538–100 ppm n-butanol).•Tunable surface oxygen vacancy sites can be achieved through an annealing process.