Boosting triboelectric performance of PDMS-based nanogenerators through dual-filler embedded triboelectric layers

Triboelectric nanogenerators (TENGs) provide an effective method for harvesting mechanical energy and converting it into electrical power. Polydimethylsiloxane (PDMS)-based TENGs are particularly advantageous due to their excellent mechanical properties, high flexibility, simple manufacturing proces...

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Veröffentlicht in:Journal of alloys and compounds 2025-01, Vol.1010, p.177114, Article 177114
Hauptverfasser: Lee, Kangpyo, Ryu, Jeong Ho, Han, HyukSu, Kim, Boyeol, Jung, Kyunghwan, Moon, In Yong, Kwon, Ohyung, Chung, Chan-Yeup, Mhin, Sungwook, Kim, Kang Min
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Sprache:eng
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Zusammenfassung:Triboelectric nanogenerators (TENGs) provide an effective method for harvesting mechanical energy and converting it into electrical power. Polydimethylsiloxane (PDMS)-based TENGs are particularly advantageous due to their excellent mechanical properties, high flexibility, simple manufacturing process, and low cost. In this study, we suggest a PDMS-based TENG by integrating surface-modified carbon nanotubes (SMCs) prepared by pulsed laser ablation (PLA), along with high-permittivity BaTiO3 (BTO) nanoparticles. The combination of SMCs' superior electrical conductivity and BTO's high dielectric constant has synergistically enhanced the TENG's performance. Compared to pristine PDMS-based TENGs, the TENG incorporating 0.05 wt% SMCs and 7 wt% BTO demonstrated a remarkable 200 % increase in voltage (432.44 V) and a 324 % increase in current (39.23 μA). Also, plasma treatment further boosts the triboelectric performance, achieving a voltage of 468 V, a current of 43.04 μA, and a power density of 7.83 W/m². [Display omitted] •Highly efficient PDMS-based TENGs were fabricated by utilizing dual fillers of SMCs and BTO.•The RF plasma process utilizing CF4 gas was utilized to improve the properties of PDMS-based TENGs.•The optimized PDMS(0.05 wt% SMCs+7 wt% BTO)-based TENG can generate an output voltage, current density and peak power density up to 468 V, 43.04 µA and 7.83 W m−2.
ISSN:0925-8388
DOI:10.1016/j.jallcom.2024.177114