Crystal growth, luminescence, and radiation response characteristics of undoped and Nd-doped langasite-type Ca3TaGa3Si2O14

Undoped and various concentrations of Nd-doped Ca3TaGa3Si2O14 (CTGS) single crystals were fabricated via the floating zone technique. The luminescence and radiation response characteristics were investigated. A broad intrinsic luminescence was observed at 300–600 nm. Sharp luminescence appeared at 900, 1060, and 1300 nm in Nd-doped samples and they originated from 4f–4f transitions of Nd3+. Photoluminescence quantum yields were calculated to be 44.7, 94.1, 87.4, and 75.5% in 0.1, 0.5, 1, and 2% Nd-doped samples, respectively when monitored at near-infrared (NIR) ranges. Linear responses between dose-rate and scintillation outputs in NIR regions were confirmed in Nd-doped samples. The 0.5% Nd-doped CTGS achieved a detection limit of 1 mGy/h. •Nd-doped Ca3TaGa3Si2O14 single crystals were successfully grown via the floating zone method.•VUV–visible light excited luminescence and scintillation properties under X-rays were investigated.•A quantum yield of the 0.5% Nd-doped Ca3TaGa3Si2O14 was 94.1% when monitored at near-infrared ranges.•The best lower detection limit in prepared samples was 1 mGy/h obtained by the 0.5% Nd-doped Ca3TaGa3Si2O14.