Electrodeposited multiphase Sb, SbSn, Cu2Sb composite with superior chemical buffering as negative electrode for lithium-ion batteries: Effect of composition on lithiation behavior of Sb-Sn-Cu alloys

Antimony-tin ternary alloys outperform graphite as negative electrodes for lithium-ion batteries, offering significantly higher gravimetric and volumetric capacities. These alloys, conductive without additives, can be electrodeposited without binders, enhancing cell design and capacity. Based on bat...

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Veröffentlicht in:Journal of alloys and compounds 2024-11, Vol.1005, p.176174, Article 176174
Hauptverfasser: Singh, Ankit Dev, Cyril, A Andrews, Varshney, Ghanshyam, Dey, Ayan, Sengupta, Srijan
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Sprache:eng
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Zusammenfassung:Antimony-tin ternary alloys outperform graphite as negative electrodes for lithium-ion batteries, offering significantly higher gravimetric and volumetric capacities. These alloys, conductive without additives, can be electrodeposited without binders, enhancing cell design and capacity. Based on bath composition, Sn-rich or Sb-rich SbSnCu ternary alloys can be synthesized which undergoes active-active-inactive chemical buffering during lithiation. The Sb-rich alloys show better stress buffering due to more lithiation/delithiation peaks and better use of lithium-inactive copper. This study finds Sb-rich alloys exhibit superior structural stability and electrochemical performance, delivering 374 mAh g−1 at 200 mA g−1 after 100 cycles, while Sn-rich alloys show substantial capacity fading, retaining only 113 mAh g−1. The Sb-rich alloy maintains structural integrity, losing only 20 % capacity over the last 80 cycles, compared to 48 % loss in capacity during the 50–80th cycles in Sn-rich alloys. [Display omitted] •Electrodeposited Sn and Sb-rich SbSnCu alloy used as anode for LIBs.•Sb-rich SbSnCu alloy exhibits more lithiation reactions than Sn-rich alloy.•Difference in lithiation profiles makes Cu a better buffer for Sb-rich alloy.•Sb-rich alloy shows 374 mAh/g after 100 cycles due to superior structural integrity.
ISSN:0925-8388
DOI:10.1016/j.jallcom.2024.176174