Achieving high sheet resistance and near-zero temperature coefficient of resistance in NiCr film resistors by Al interlayers

Thin film resistive materials with low temperature coefficients of resistance (TCR) and high sheet resistances are essential for various electronic applications, such as embedded resistors. In this study, Al inserting layers and NiCr resistive layers were sequentially deposited on alumina ceramic substrates via DC magnetron sputtering to fabricate Al/NiCr bilayer resistive materials. The electrical properties of the bilayer films were adjusted by varying the thicknesses of the Al inserting layers and annealing conditions. When the thickness of the Al inserting layer varied from 5 to 7.5 nm, and post-annealing treatments ranging from 200℃ to 400℃ were applied, evident Al-NiCr interdiffusion occurred, forming intermediate layers at the interfaces and oxides on the film surfaces. A mixture of partial crystalline phases and amorphous phases was also observed in the cross-sectional high-resolution transmission electron microscope (HRTEM) images. The formation of intermediate layers and surface oxides and the balance between partial crystalline phases and amorphous phases collectively enhanced the electrical performance of bilayer film resistors, achieving thin film resistors with a remarkably low TCR of −6.61 ppm/K and a sheet resistance of up to 265.95 Ω/sq. By rational design of Al layers, NiCr layers and thermal treatment, thin film resistors with near zero TCRs and extremely wide sheet resistance range of 93.34–1439.01 Ω/sq can be obtained. •Successfully fabricated Al/NiCr film resistors with near-zero TCR in a wide sheet resistance range(90–1400Ω/sq) by varying the thickness and the annealing condition.•Systematically elucidate the underlying improving mechanisms and their specific contributions.•Evidence of Al-NiCr diffusion and the formation NiCrAl intermediate layer after annealing.•Evidence of Cr, Al and O segregation on films’ surfaces and the formation of a NiCr layer enriched with metal oxides.•Providing potential and promising solutions for thin film resistors in many other fields, such as embedded thin film resistors and CMOS-related applications.