Intrinsic and defect-induced luminescence of lithium antimonate LiSbO3

Studies of investigating intrinsic and defect-induced luminescence in semiconductors can yield valuable insights into the underlying mechanisms and their significance for optoelectronic applications. This research focuses on self-activated lithium antimonate LiSbO3, synthesized through a solid-state reaction method. The as-prepared samples underwent post-annealing treatment in air and a CO atmosphere, respectively. The work investigated the phase formation, structures, elemental composition, band transition characteristics, luminescence properties, and decay lifetimes of the self-activated phosphors. LiSbO3 is identified as an n-type semiconductor with a direct allowed transition and the band gap energy of 2.97 eV. The experiment also confirmed the presence of oxygen vacancy (VO) centers during the synthesis of LiSbO3. The self-activated luminescence of LiSbO3 was found to be sensitive to the post-annealing atmosphere. Notably, post-annealing in a reducing environment significantly enhances the luminescence efficiency. The luminescence characteristics and thermal stability of LiSbO3 are closely linked to oxygen defects, which play a critical role in the color emissions of this self-activated phosphor. [Display omitted] •LiSbO3 belongs to n-type direct allowed transition semiconductor with a band gap of 3.05 eV.•Self-activated emission in LiSbO3 is achieved.•Oxygen vacancy defect is the major luminescence center.•Intrinsic luminescence of the antimonate can be adjusted by annealing treatments.