Effect of lattice defects on crystal structure and microwave properties of Ba(Ga1/2Ta1/2)O3 doped Ba(Zn1/3Nb2/3)O3 ceramics

Traditionally, B-site cation ordering structure in Ba(B′1/3B″2/3)O3 based ceramics with complex perovskite structure is considered to be the dominant factor in determining the dielectric loss. The crystal structure of BZN-BGT ceramics changes to the B-site disordering from B-site 1:2 ordering accompanying with remarkably reduced dielectric loss. Ba(Ga1/2Ta1/2)O3 doping also inhibits the formation of Nb-rich secondary phases induced by Zn volatilization on the surface of BZN-BGT ceramics as well. The conductive activation energy Ea, an energy required for electrons to escape from the traps, increases to 0.55 eV from 0.40 eV, indicating the decrease of lattice defects concentration. As Ba(Ga1/2Ta1/2)O3 doping concentration increases, the dielectric thermal relaxation process of BZN-BGT ceramics weakens and the electrical conductivity decreases. These results indicate that the dielectric loss of BZN-BGT ceramics containing volatile Zn could be controlled by the lattice defects and secondary phases rather than B-site 1:2 ordering structure. •The ordering-disordering transition of BZN-BGT ceramics is accompanied with remarkably reduced dielectric loss.•When the doping concentration increase, the conductive activation energy Ea increases to 0.55 eV from 0.40 eV.•The dielectric thermal relaxation process of BZN-BGT ceramics weakens and the electrical conductivity decreases.•0.7BZN-0.3BGT ceramic shows excellent microwave dielectric properties: Q×f=70,300 GHz, εr=40.4, τf=2.7 ppm/℃.