Tuning the metal-insulator transition temperature by the controlled generation of oxygen vacancies on La0.7Ca0.3MnO3-x epitaxial thin films

This report presents a study on the effect of the controlled generation of oxygen vacancies on the electronic transport properties of La0.7Ca0.3MnO3-x epitaxial thin films. Oxygen defects cause significant changes in the crystalline structure of mixed-valence manganites and lower the Mn valence, resulting in a shift of the metal-insulator transition to lower temperatures due to modifications in the angles and lengths of Mn-O bonds. Experiments using Polarized Extended X-Ray Absorption Fine Structure Spectroscopy have provided strong evidence that oxygen vacancies are mainly formed in the basal plane of the MnO6 octahedra. The accurate control of oxygen vacancies generation opens possibilities for managing and enhancing the magneto-electronic properties of epitaxial manganite thin films with potential in industrial applications. •Controlled generation of oxygen vacancies in La0.7Ca0.3MnO3-x epitaxial thin films.•Oxygen vacancies produce metal-insulator transition shifts to lower temperatures.•Polarized EXAFS distinguish basal and apical oxygens in octahedral structure.•Oxygen vacancies are mainly formed in the basal plane of the MnO6 octahedra.